Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
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概要
- 論文の詳細を見る
The operating characteristics of flash memory devices with tunnel dielectrics comprising a silicon nitride layer or a silicon nitride/silicon dioxide (N/O) stack and annealed at various temperatures are studied. The present work indicates that flash memory devices with an N/O stack tunnel dielectric have a higher program/erase speed and reliability than those with a single Si3N4 layer. The stack tunnel dielectric composed of a thick Si3N4 layer and a thin SiO2 layer exhibits even better performance for flash memory operation. Flash memory devices having N/O stack tunnel dielectrics annealed at low temperatures show better performance in terms of erase speed and charge retention but poor robustness under read disturbance.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-03-10
著者
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Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
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Wang Tien-ko
Department Of Engineering And System Science National Tsing Hua University
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Sung Chao-feng
Department Of Engineering And System Science National Tsing Hua University
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Lai Hsiang-yueh
Department Of Engineering And System Science National Tsing Hua University
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Sung Chao-Feng
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Wang Tien-Ko
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Lai Hsiang-Yueh
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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