Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in N_20
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概要
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The hot-electron and radiation hardnesses in metal-oxide-Si(MOS) capacitors are dramatically improved by the combination of a gate electrode deposited using amorphous Si and a gate oxide rapid thermal annealed in N_2O, The charge-to-breakdown performance of MOS capacitors fabricated by this technique is excellent. The numbers of hot-electron and radiation induced interface traps are significantly reduced. The hardness improvement can be explained in terms of a mechanism based on an increase in compressive stress (macroscopic strain) in the oxide and relaxation of SiO_2/Si interfacial strain.
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
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Chang-liao Kuei-shu
Department Of Nuclear Engineering And Engineering Physics National Tsing Hua University
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CHEN Ling-Chih
Department of Nuclear Engineering and Engineering Physics, National Tsing Hua University
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Chen Ling-chih
Department Of Nuclear Engineering And Engineering Physics National Tsing Hua University
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