Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-08-01

著者

• CHANG-LIAO Kuei-Shu

  Department of Engineering and System Science, National Tsing Hua University

• Chang‐liao K‐s

  National Tsing Hua Univ. Hsinchu Twn

• LAN Tang-Yuan

  Department of Nuclear Engineering and Engineering Physics, National Tsing Hua University

• Lan Tang-yuan

  Department Of Nuclear Engineering And Engineering Physics National Tsing Hua University

• Chang-liao Kuei-shu

  Department Of Engineering And System Science National Tsing Hua University

関連論文

• Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
• Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O
• Characterizing Optical Constants of Thin Films for Vacuum Ultraviolet Lithography Applications
• Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
• Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
• Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation : Semiconductors
• Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
• Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
• Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
• Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter
• Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in N_20
• Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
• Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
• Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
• Extraction Method of Threshold Voltage and Transconductance to Assess Radiation Effects on MOS Circuits
• Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure
• Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric

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