Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
スポンサーリンク
概要
- 論文の詳細を見る
The effects of drive-in temperature/time for As^+ implantation on the electrical properties of metal-oxide-Si (MOS) capacitors are investigated. It is found that As in the gate oxide degrades significantly the stability and reliability of MOS devices. When the drive-in temperature/time is increased, the sheet resistance of the gate electrode is decreased while the changes in the electrical properties of MOS devices become significant. From the results of neutron activation analysis (NAA) of arsenic concentration in various gate oxides, changes in the electrical properties of MOS devices could be attributed to the diffusion of arsenic into the gate oxide and/or the SiO_2/Si interface.
- 社団法人応用物理学会の論文
- 1998-10-15
著者
-
Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
-
CHEN Chung-Hsien
Department of Engineering and System Science, National Tsing Hua University
-
Chen Chung-hsien
Department Of Engineering And System Science National Tsing Hua University
-
Chen Chung-Hsien
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
関連論文
- Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
- Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O
- Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
- Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
- Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation : Semiconductors
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
- Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
- Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter
- Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in N_20
- Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
- Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Extraction Method of Threshold Voltage and Transconductance to Assess Radiation Effects on MOS Circuits
- The Leakage Current Conduction Mechanisms of Cu/Porous Silica Damascene Schemes with Nano-cluster TaSix Barrier
- Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric