Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
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概要
- 論文の詳細を見る
- 1997-12-15
著者
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Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
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Tzeng Pei-jer
Department Of Engineering And System Science National Tsing Hua University
関連論文
- Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
- Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O
- Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
- Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
- Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation : Semiconductors
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
- Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
- Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter
- Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in N_20
- Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
- Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Extraction Method of Threshold Voltage and Transconductance to Assess Radiation Effects on MOS Circuits
- Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric