Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Wang T.
Department Of Orthopaedic Surgery The Affiliated Hospital Of Medical College Of Qingdao University
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Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
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Huang S.
Physics Division Institution Of Nuclear Energy Research
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KAO H.
Department of Chemistry, Tamkang University
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TSAI Ping-Hung
Department of Engineering and System Science, National Tsing Hua University
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TSAI W.
Physics Division, Institution of Nuclear Energy Research
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AI C.
Physics Division, Institution of Nuclear Energy Research
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Tsai Ping-hung
Department Of Engineering And System Science National Tsing Hua University
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Kao H.
Department Of Chemistry Tamkang University
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Kao H.
Department Of Engineering And System Science National Tsing Hua University
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Tsai W.
Physics Division Institution Of Nuclear Energy Research
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Wang T.
Department Of Chemistry Soochow University
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Wang T.
Department Of Engineering And System Science National Tsing Hua University
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