Wang Tien-ko | Department Of Engineering And System Science National Tsing Hua University
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概要
関連著者
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Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
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Wang Tien-ko
Department Of Engineering And System Science National Tsing Hua University
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CHANG-LIAO Kuei-Shu
Department of Engineering and System Science, National Tsing Hua University
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Chang‐liao K‐s
National Tsing Hua Univ. Hsinchu Twn
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CHENG Chin-Lung
Department of Engineering and System Science, National Tsing Hua University
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WANG Tien-Ko
Department of Engineering and System Science, National Tsing Hua University
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Sung Chao-feng
Department Of Engineering And System Science National Tsing Hua University
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Cheng Chin-lung
Department Of Engineering And System Science National Tsing Hua University
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Lai Hsiang-yueh
Department Of Engineering And System Science National Tsing Hua University
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HUANG Ching-Hung
Department of Engineering and System Science, National Tsing Hua University
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WANG Ping-Liang
Department of Engineering and System Science, National Tsing Hua University
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LAI Hsiang-Yueh
Department of Engineering and System Science, National Tsing Hua University
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SUNG Chao-Feng
Department of Engineering and System Science, National Tsing Hua University
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Huang Ching-hung
Department Of Engineering And System Science National Tsing Hua University
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Wang Ping-liang
Department Of Engineering And System Science National Tsing Hua University
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Sung Chao-Feng
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Wang Tien-Ko
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Liao Kuei-Shu
Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Lai Hsiang-Yueh
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
著作論文
- Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
- Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric