Chen Ching-wei | Institute Of Electronics National Chiao-tung University

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概要

• Chen Ching-Weiの詳細を見る
• 同名の論文著者
• Institute Of Electronics National Chiao-tung Universityの論文著者

関連著者

• CHIEN Chao-Hsin

  National Nano Device Laboratories

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Chen Ching-wei

  Institute Of Electronics National Chiao-tung University

• Hsu Shih-lu

  National Nano Device Laboratory

• Chen Yi-cheng

  Institute Of Electronics National Chiao-tung University

• Tsui Bing-yue

  Institute Of Electronics National Chiao-tung University

• Lehnen Peer

  Aixtron Ag Kackertstr

• CHEN Ching-Wei

  Institute of Electronics, National Chiao-Tung University

• LIANG Jann-Shyang

  Institute of Electronics, National Chiao-Tung University

• Yang Ming-jui

  National Nano Device Laboratories

• Perng Tsu-hsiu

  Institute Of Electronics National Chiao-tung University

• Chang Chun-Yen

  Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan

• Tsui Bing-Yue

  Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan

• Liang Jann-Shyang

  Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan

• Chen Ching-Wei

  Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan

• Yang Ming-Jui

  National Nano Device Laboratory, Hsinchu 300, Taiwan

• Chien Chao-Hsin

  National Nano Device Laboratory, Hsinchu 300, Taiwan

• Lehnen Peer

  Aixtron AG, Kackertstr, 15-17 Aachen 52072, Germany

• Chien Chao-Hsin

  National Nano Device Laboratory, Hsinchu, 300, Taiwan

• Perng Tsu-Hsiu

  Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan

• Chang Chun-Yen

  Institute of Electronics, National Chiao-Tung University, Hsinchu, 300, Taiwan

• Hsu Shih-Lu

  National Nano Device Laboratory, Hsinchu, 300, Taiwan

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著作論文

• Reliability of Strained SiGe Channel p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ultra-Thin ($\text{EOT}=3.1$ nm) N2O-Annealed SiN Gate Dielectric
• Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
• Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric
• Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments

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