Yang Ming-jui | National Nano Device Laboratories
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概要
関連著者
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CHIEN Chao-Hsin
National Nano Device Laboratories
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Yang Ming-jui
National Nano Device Laboratories
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Lehnen Peer
Aixtron Ag Kackertstr
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Yang M‐j
Kyushu Univ. Fukuoka Jpn
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YANG Ming-Jui
National Nano Device Laboratory
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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Tsui Bing-yue
Institute Of Electronics National Chiao-tung University
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LIANG Jann-Shyang
Institute of Electronics, National Chiao-Tung University
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Perng Tsu-hsiu
Institute Of Electronics National Chiao-tung University
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Chang Chun-yen
Institute Of Electronics National Chiao Tung University
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HUANG Tiao-Yuan
Institute of Electronics, National Chiao Tung University
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LEU Ching-Chich
National Nano Device Laboratory
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HUANG Tiao-Yuan
National Nano Device Laboratory
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Huang Tiao-yuan
National Nano Device Laboratories
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Huang Tiao-yuan
Institute Of Electronics National Chiao Tung University
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LU Wen-Tai
Institute of Electronics, National Chiao-Tung University
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LAN Wen-Ting
Institute of Electronics, National Chiao-Tung University
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LEE Tsung-Chieh
Institute of Electronics, National Chiao-Tung University
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SHEN Shih-Wen
National Nano Device Laboratory
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CHEN Ching-Wei
Institute of Electronics, National Chiao-Tung University
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PERNG Tsu-Hsiu
Institute of Electronics, National Chiao-Tung University
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TSENG Tseung-Yuen
Institute of Electronics, National Chiao Tung University
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Lu Wen-tai
Institute Of Electronics National Chiao Tung University
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Shen Shih-wen
National Nano Device Laboratories
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ZHANG Ren-Jian
Institute of Electronics, National Chiao Tung University
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WU Shich-Chuan
National Nano Device Laboratories
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Chang Chun-yen
Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories
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Zhang Ren-jian
Institute Of Electronics National Chiao Tung University
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Lan Wen-ting
Institute Of Electronics National Chiao-tung University
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Lee Tsung-chieh
Institute Of Electronics National Chiao-tung University
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Chen Ching-wei
Institute Of Electronics National Chiao-tung University
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Huang Tiao-yuan
National Chiao Tung University
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Leu Ching-chich
National Nano Device Laboratories
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Tseng Tseung-yuen
Institute Of Electronics National Chiao Tung University
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Shen Shih-Wen
National Nano Device Laboratory, Hsinchu, Taiwan 300, R.O.C.
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Chang Chun-Yen
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Tsui Bing-Yue
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Liang Jann-Shyang
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Lu Wen-Tai
Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.
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Lan Wen-Ting
Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.
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Chen Ching-Wei
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Huang Tiao-Yuan
Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.
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Yang Ming-Jui
National Nano Device Laboratory, Hsinchu, Taiwan 300, R.O.C.
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Yang Ming-Jui
National Nano Device Laboratory, Hsinchu 300, Taiwan
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Chien Chao-Hsin
National Nano Device Laboratory, Hsinchu, Taiwan 300, R.O.C.
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Chien Chao-Hsin
National Nano Device Laboratory, Hsinchu 300, Taiwan
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Lee Tsung-Chieh
Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.
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Lehnen Peer
Aixtron AG, Kackertstr, 15-17 Aachen 52072, Germany
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Perng Tsu-Hsiu
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
著作論文
- Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
- Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
- Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment