LIANG Jann-Shyang | Institute of Electronics, National Chiao-Tung University
スポンサーリンク
概要
関連著者
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CHIEN Chao-Hsin
National Nano Device Laboratories
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Tsui Bing-yue
Institute Of Electronics National Chiao-tung University
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Lehnen Peer
Aixtron Ag Kackertstr
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LIANG Jann-Shyang
Institute of Electronics, National Chiao-Tung University
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Yang Ming-jui
National Nano Device Laboratories
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Perng Tsu-hsiu
Institute Of Electronics National Chiao-tung University
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Chang Chun-yen
Institute Of Electronics National Chiao Tung University
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Yang M‐j
Kyushu Univ. Fukuoka Jpn
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YANG Ming-Jui
National Nano Device Laboratory
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CHEN Ching-Wei
Institute of Electronics, National Chiao-Tung University
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PERNG Tsu-Hsiu
Institute of Electronics, National Chiao-Tung University
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Chang Chun-yen
Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories
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Chen Ching-wei
Institute Of Electronics National Chiao-tung University
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Chang Chun-Yen
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Tsui Bing-Yue
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Liang Jann-Shyang
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Chen Ching-Wei
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
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Yang Ming-Jui
National Nano Device Laboratory, Hsinchu 300, Taiwan
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Chien Chao-Hsin
National Nano Device Laboratory, Hsinchu 300, Taiwan
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Lehnen Peer
Aixtron AG, Kackertstr, 15-17 Aachen 52072, Germany
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Perng Tsu-Hsiu
Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan
著作論文
- Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments