Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal–Insulator–Metal Capacitors

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概要

• 論文の詳細を見る

• The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal–insulator–metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-$\alpha$) of 510 ppm/V2 and a high capacitance density of ${\sim}20$ fF/μm2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-$\alpha$, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.

• 2009-08-25

著者

• Chin Albert

  Department Of Electronic Engineering National Chiao Tung University

• Yeh Fon-shan

  Institute Of Electrical Engineering National Tsing Hua University

• Cheng Chun-Hu

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

• Huang Ching-Chien

  Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

• Liou Bo-Heng

  Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan

• Yeh Fon-Shan

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

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