Unipolar Ni/GeOx/PbZr.Ti.O/TaN Resistive Switching Memory
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Chin Albert
Department Of Electronic Engineering National Chiao Tung University
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Yeh Fon-shan
Department Of Electrical Engineering National Tsing Hua University
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Chou Kun-I
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
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Cheng Chun-Hu
Chung-Shan Institute of Science and Technology, Taoyuan 32571, Taiwan, R.O.C.
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Chen Po-Chun
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
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- Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal–Insulator–Metal Capacitors
- Unipolar Ni/GeOx/PbZr.Ti.O/TaN Resistive Switching Memory
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- Improved Stress Reliability of Analog TiHfO Metal–Insulator–Metal Capacitors Using High-Work-Function Electrode
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- Simulation for the Microcrystalline Silicon Thin Film Transistors by Considering the Change of Acceptor-Like State and Microcrystal Grain Size Effect
- Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning
- Performance comparison of titanium-oxide resistive switching memories using GeO