Deuterium Effect on Stress-Induced Leakage Current
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概要
- 論文の詳細を見る
We have studied and compared stress-induced leakage current in oxides subjected to H_2 and D_2 annealing. There is not much difference in stress-induced leakage current between thick 70-Å-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Å-thick oxides annealed in D_2 ambient compared to that annealed in H_2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiO_x layer.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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WANG Tahui
Department of Electronics Engineering, National Chiao-Tung University
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Wang Tahui
Department Of Electronic Engineering National Chiao Tung University
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Chin Albert
Department Of Electronic Engineering National Chiao Tung University
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LIN Bo
Department of Electronic Engineering, Northern Taiwan Institute of Science and Technology
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Lin Bo
Department Of Electronic Engineering National Chiao Tung University
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CHENG Yih
Department of Electronic Engineering, National Chiao Tung University
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TSAI Chun
Department of Electronic Engineering, National Chiao Tung University
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Cheng Yih
Department Of Electronic Engineering National Chiao Tung University
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Tsai Chun
Department Of Electronic Engineering National Chiao Tung University
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