Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH3 Nitridation of Chemical Oxide and Reoxidation with O2
スポンサーリンク
概要
- 論文の詳細を見る
We have proposed an approach for growing robust ultrathin oxynitride using conventional thermal processes with the capability of preventing boron penetration. In this method, we obtain oxynitride with high nitrogen concentration (${\approx}13$ at. %) on the top and low interface state density ($D_{\text{it}}=2\times 10^{10}$ cm-2 eV-1). The films demonstrate excellent properties in terms of low $D_{\text{it}}$, low leakage current, high endurance in stressing and superior boron diffusion blocking behavior. This method does not involve any additional capital equipment [such as decoupled plasma nitridation (DPN) or remote plasma nitridation (RPN)] or gas (NO or N2O). In addition, it obtains high-quality oxynitride film with low thermal budget. Most importantly, this process is simple and fully compatible with current process technology. It would be important and interesting for process engineers engaged in the field of gate dielectrics. It is suitable for the next generation of ULSI technology.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
-
CHANG Kow
Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University, N
-
Lin Bo
Department Of Electronic Engineering National Chiao Tung University
-
Lai Chiung
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
-
Hsieh Kuang
Nano-technology R&D Div./Emerging Central Lab. Macronix International Co. Ltd, Hsinchu, Taiwan 300, Republic of China
-
Chang Kow
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsin-Chu, Taiwan, Republic of China
-
Lai Chiung
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsin-Chu, Taiwan, Republic of China
-
Lai Yi
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, Republic of China
-
Hsieh Kuang
Nano-technology R&D Division/Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu, Taiwan 300, Republic of China
-
Lin Bo
Department of Electronic Engineering, Northern Taiwan Institute of Science and Technology, Taipei 112, Taiwan, Republic of China
関連論文
- Reduction of Selectivity Loss Probability on Dielectric Surface during Chemical Vapor Deposition of Tungsten Using Fluorinated Oxide and Removing Silanol Units on Dielectric Surface
- Thickness and Stress Polarity Effects on the Reliability of the Low Thermal Budget Polyoixdes : Semiconductors
- Quality and Power Efficient Architecture for the Discrete Cosine Transform(VLSI Architecture, VLSI Design and CAD Algorithms)
- Improved Retention Characteristic in Polycrystalline Silicon--Oxide--Hafnium Oxide--Oxide--Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
- Reoxidation Behavior of High-Nitrogen Oxynitride Films after O_2 and N_2O Treatment
- Deuterium Effect on Stress-Induced Leakage Current
- Hot Carrier Induced Degradation in the Low Temperature Processed Polycrystalline Silicon Thin Film Transistors Using the Dynamic Stress
- Comparison of the Characteristics of Polyoxides Grown by Thermal, Rapid Thermal Oxidation, and Tetraethylorthosilicate Deposition Methods
- The Effect of the Growth Temperature on Polyoxide by Rapid Thermal Processing
- Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH3 Nitridation of Chemical Oxide and Reoxidation with O2
- Reoxidation Behavior of High-Nitrogen Oxynitride Films after O2 and N2O Treatment