Reoxidation Behavior of High-Nitrogen Oxynitride Films after O2 and N2O Treatment
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概要
- 論文の詳細を見る
Reoxidation of a high-nitrogen ultrathin oxynitride (${\sim}1.3$ nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O2 and N2O. It is clear that the N2O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-05-15
著者
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Yao June
Department Of Electronic Materials Far East College
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CHANG Kow
Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University, N
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Lin Bo
Department Of Electronic Engineering National Chiao Tung University
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Lai Chiung
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
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Hsieh Kuang
Nano-technology R&D Div./Emerging Central Lab. Macronix International Co. Ltd, Hsinchu, Taiwan 300, Republic of China
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