Reduction of Selectivity Loss Probability on Dielectric Surface during Chemical Vapor Deposition of Tungsten Using Fluorinated Oxide and Removing Silanol Units on Dielectric Surface
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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WANG Shih
Department of Cosmetic Applications & Management, Cardinal Tien College of Healthcare & Management
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Tsai Jung
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University Nat
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CHANG Kow
Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University, N
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LI Chii
Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University, N
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YEH Ta
Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University, N
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Yeh Ta
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University Nat
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Li Chii
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University Nat
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Wang Shih
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University Nat
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Chang K
National Chiao‐tung Univ. Hsin‐chu Twn
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- Reduction of Selectivity Loss Probability on Dielectric Surface during Chemical Vapor Deposition of Tungsten Using Fluorinated Oxide and Removing Silanol Units on Dielectric Surface
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