Fabrication of AlGaInP Circular Ring Laser Resonators by Excimer-Laser-Assisted Etching at Cryogenic Temperature
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概要
- 論文の詳細を見る
We present the fabrication of an InGaAlP multiple-quantum-well semiconductor laser with a ridge waveguide circular ring resonator using novel UV-laser-assisted etching at a cryogenic substrate temperature of $-130$ °C. For a circular ring laser with a 250-μm-radius circular resonator and a 500 μm Y-junction output coupling section, the light-intensity measurement shows a threshold current of 600 mA with an output power of 2.0 mW by pulse mode current injection at 10 kHz. The spectral characterization shows a lasing wavelength centered at 658.2 nm and a side mode rejection ratio as high as 5 dB.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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WANG Shih
Department of Cosmetic Applications & Management, Cardinal Tien College of Healthcare & Management
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Shih Ming
Department Of Mechanical Engineering Nation Cheng Kung University
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Wang Shih
Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd, Nan-Tzu District, Kaohsiung 811, Taiwan, R.O.C.
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Shih Ming
Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd, Nan-Tzu District, Kaohsiung 811, Taiwan, R.O.C.
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