A Semiconductor Soliton Cavity Laser Diode and its Output Characteristics
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概要
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We demonstrated the fabrication of a novel semiconductor laser diode with a cavity formed by a spatial soliton waveguide based on the photovoltaic photorefractive effect. The laser diode device is fabricated on a metal organic chemical vapor deposition (MOCVD)-grown InGaAlP multiple-quantum-well structure with a ridge-waveguide circular ring resonator and a Y-junction directional coupler section. The optical properties of the soliton waveguide can be effectively modulated by the emission from the circular ring resonator and the coupling of the Y-junction directional coupler. The laser diode showed the hybrid output spectral characteristics of a single-mode spectrum with a peak at 658 nm and a multimode spectrum distributed at a shorter wavelength at the nonwaveguide soliton cavity terminal. In addition, experiments to investigate the effect of the soliton cavity length were performed to reveal the mechanism of the lasing threshold and the output characteristics of the soliton cavity laser diode.
- 2011-04-25
著者
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Shih Ming
Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd, Nan-Tzu District, Kaohsiung 811, Taiwan, R.O.C.
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Shih Ming
Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu Dist. 811, Kaohsiung, Taiwan 811, R.O.C.
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