Improved Retention Characteristic in Polycrystalline Silicon--Oxide--Hafnium Oxide--Oxide--Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride

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概要

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• In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal--oxide--semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon--oxide--hafnium oxide--oxide--silicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH3) nitridation followed by reoxidation with oxygen (O2). The novel oxynitride process is not only compatible with the standard complementary metal--oxide--semiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application.

• 2011-03-25

著者

• Lin Bo

  Department Of Electronic Engineering National Chiao Tung University

• Lai Chiung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Hsieh Chih

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, Taiwan 30010, R.O.C.

• Lin Gray

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, Taiwan 30010, R.O.C.

• Zheng Yuan

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, Taiwan 30010, R.O.C.

• Lou Jen

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, Taiwan 30010, R.O.C.

• Lin Bo

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, Taiwan 30010, R.O.C.

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• Improved Retention Characteristic in Polycrystalline Silicon--Oxide--Hafnium Oxide--Oxide--Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
• Deuterium Effect on Stress-Induced Leakage Current
• Mode Control of Vertical-Cavity Surface-Emitting Lasers by Germanium Coating
• Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH3 Nitridation of Chemical Oxide and Reoxidation with O2
• Reoxidation Behavior of High-Nitrogen Oxynitride Films after O2 and N2O Treatment
• Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers

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