Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
-
YEH C.
Department of Electrical Engineering, Texas A&M University, College Station
-
ZOUS N.
Department of Electronics Engineering, National Chiao-Tung University
-
WANG Tahui
Department of Electronics Engineering, National Chiao-Tung University
-
HUANG L.
Department of Electronics Engineering, National Chiao-Tung University
-
Zous N.
Department Of Electronics Engineering National Chiao-tung University
-
CHAO T.
National Nano Device Laboratory
-
Wang Tahui
Department Of Electronics Engineering National Chiao-tung University
-
Wang Tahui
Department Of Electronic Engineering National Chiao Tung University
-
Yeh C.
Department Of Electronics Engineering National Chiao-tung University
-
Yeh C.
Department Of Electrical Engineering Texas A&m University College Station
-
Huang L.
Department Of Electronics Engineering National Chiao-tung University
関連論文
- Down-Conversion of Microwave Optoelectronic Signals in a GaAs Microstrip Ring Resonator
- Simulation of Positive Oxide Trapped Charge Induced Leakage Current and Read-Disturb in Flash EEPROMs
- Auger Recombination Enhanced Hot Electron Programming in Flash EEPROMs
- Stress Induced Subthreshold Current Hump in Short Gate-Length pMOSFET's with Shallow Trench Isolation
- Temperature Effect on Off-State Drain Leakage Current in a Hot-Carrier Stressed n-MOSFET
- A Comparative Study of Interface Trap Induced Drain Leakage Current in Various n-MOSFET Structures
- The Polarity Dependence of Soft-Breakdown Characterization for Ultra-Thin Gate Oxides Affected by Nitrogen and Fluorine
- Improvement of Reliability of MOSFET's with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
- Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
- Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
- Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's
- Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFET's
- High Performance Sub-0.1μm Dynamic Threshold MOSFET Using Indium Channel Implantation
- Deuterium Effect on Stress-Induced Leakage Current
- Performance and Reliability Improvement of Polycrystalline Silicon Thin Film Transistors by Deuterium Plasma Passivation
- Nacre, Pearlite and Micro-Assembly of Metal Carbide/Metal Multilayers
- Floating Body Accelerated Oxide Breakdown Progression in Ultra-Thin Oxide SOI pMOSFETs
- IS-31 Giant Leiomyoma of the Uterus : Report of a Case and Review of the Literature
- Width Scaling and Layout Variation Effects on Dual Damascene Copper Interconnects Electromigration
- Improvement of Ultra-Thin 3.3nm Thick Oxide for Co-Salicide Process Using NF3 Annealed Poly-Si Gate
- A Novel Soft-Program for a Narrow Erased State Vt Distribution, Read Disturbance Suppression and Over-Program Annihilation in Multilevel Cell Flash Memories
- Copper Interconnect Electromigration Behavior in Various Structures and Precise Bimodal Fitting