The Polarity Dependence of Soft-Breakdown Characterization for Ultra-Thin Gate Oxides Affected by Nitrogen and Fluorine

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Lai Chao.

  Department Of Electronic Engineering Chang Gung University

• CHAO T.

  National Nano Device Laboratory

関連論文

• The Polarity Dependence of Soft-Breakdown Characterization for Ultra-Thin Gate Oxides Affected by Nitrogen and Fluorine
• Improvement of Reliability of MOSFET's with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
• Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
• Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's
• Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFET's
• High Performance Sub-0.1μm Dynamic Threshold MOSFET Using Indium Channel Implantation
• Improvement of Ultra-Thin 3.3nm Thick Oxide for Co-Salicide Process Using NF3 Annealed Poly-Si Gate

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