Improvement of Ultra-Thin 3.3nm Thick Oxide for Co-Salicide Process Using NF3 Annealed Poly-Si Gate
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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CHANG T.
Department of Electronics Engineering, National Chiao-Tung University
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CHAO T.
National Nano Device Laboratory
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HUANG T.
National Nano Device Laboratory
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LEI T.
Department of Chemistry, Fudan University
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CHOU S.
Special Technology Division, United Microelectronics Corporation
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LIN H.
National Nano Device Lab.
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Chou S.
Special Technology Division United Microelectronics Corporation
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Lin H.
Institute Of Mechatronics Engineering National Taipei University Of Technology
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CHEN S.
Air Products Asia
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TUAN A.
Air Products Asia
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CHOU S.
San Fu Co Ltd.
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Lei T.
Department Of Electronics Engineering National Chiao Tung University
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Chang T.
Department Of Electronics Engineering National Chiao-tung University
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- Improvement of Ultra-Thin 3.3nm Thick Oxide for Co-Salicide Process Using NF3 Annealed Poly-Si Gate
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