DC Hot Carrier Reliability at Elevated Temperatures for nMOSFETs Using 0.13μm Technology
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Chen H.
Institute of Mechanics and Materials, University of California, San Diego
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LIN H.
Institute of Physics, Academia Sinica
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LEI T.
Department of Chemistry, Fudan University
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Jhou Z.
Institute Of Mechatronics Engineering National Taipei University Of Technology
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CHEN S.
Institute of Mechatronics Engineering, National Taipei University of Technology
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LIN J.
Special Technology Division, United Microelectronics Corporation
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CHOU S.
Special Technology Division, United Microelectronics Corporation
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KO J.
Special Technology Division, United Microelectronics Corporation
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HAUNG H.
Institute of Mechatronics Engineering, National Taipei University of Technology
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Haung H.
Institute Of Mechatronics Engineering National Taipei University Of Technology
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Lin H.
Institute Of Materials Science And Engineering National Sun Yat-sen University
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Chen H.
Institute Of Crystal Materials Shandong University
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Chou S.
Special Technology Division United Microelectronics Corporation
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Lin H.
Institute Of Mechatronics Engineering National Taipei University Of Technology
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Lei T.
Department Of Electronics Engineering National Chiao Tung University
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Chen S.
Institute Of Mechatronics Engineering National Taipei University Of Technology
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Lin J.
Special Technology Division United Microelectronics Corporation
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