Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate
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概要
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In this paper we report the DC characteristics and radio frequency (RF) power performance improvement as high as 6.6% of asymmetric lightly doped drain metal–oxide–semiconductor field-effect transistors (asymmetric LDD MOSFET, AMOSFET) with 50-μm-thick silicon substrates on SiC substrates. The self-heating and parasitic effects of large size AMOSFETs with 50-μm-thick silicon on SiC substrates are reduced owing to good heat dissipation and less lossy behaviors of thinned silicon substrates and SiC substrates. Therefore, the power gain, saturation output power, and power added efficiency of AMOSFETs with 50-μm-thick Si substrates mounted on SiC substrates is improved.
- 2010-01-25
著者
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LIU S.
Department of Orthopaedic Surgery, Sun-Yat Sen University Medical College
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Chang Tsu
Department Of Biochemistry National Defense Medical Center
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Chin Albert
Department Of Electronic Engineering National Chiao Tung University
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Chin Albert
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.
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Kao Hsuan-ling
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan, R.O.C.
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Deng Joseph
Cyntec Co., Ltd., Hsinchu, Taiwan, R.O.C.
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Horng K.
Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan, R.O.C.
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Kao Hsuan-Ling
Department of Electronic Engineering, Chang Cung University, Tao-Yuan 333, Taiwan, R.O.C.
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