Radio Frequency Performance Improvement with Drain Bias and Limiting Factors of 65-nm-Node Radio Frequency Metal–Oxide–Semiconductor Field-Effect Transistors

概要

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With the continuous down scaling of radio frequency metal–oxide–semiconductor field-effect transistors (RF MOSFETs) into a 65 nm node, the RF performance of unity-gain cutoff frequency ($ f_{\text{T}}$), the maximum frequency of oscillation ($ f_{\text{max}}$), and the minimum noise figure ($\mathit{NF}_{\text{min}}$) show much smaller dependences on short-channel effects due to increases in drain current and transconductance ($g_{\text{m}}$), which originate from the short-channel effects. We have studied the effect of drain bias on the RF performance of 65-nm-node MOSFETs. Both the $ f_{\text{T}}$ and $\mathit{NF}_{\text{min}}$ improve linearly with increasing drain voltage, in contrast with their independence on drain bias in longer-channel devices. Additionally, although $ f_{\text{T}}$ improves continuously in sub-65-nm node devices, $ f_{\text{max}}$ and $\mathit{NF}_{\text{min}}$ deteriorate more in 65-nm-node transistors than in 90-nm-node devices owing to a limiting parasitic effect.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-01-25