Direct Measurement of Low Noise 90-nm-Node RF Metal Oxide Semiconductor Field-Effect Transistors Using New Layout

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概要

• 論文の詳細を見る

• Using a new layout, the microstrip line layout, to screen the RF noise generated by a lossy substrate, a noise figure ($\mathit{NF}_{\text{min}}$) of 0.46 dB at 10 GHz has been directly measured for 8-gate-finger 90-nm-node MOSFETs ($L_{\text{G}}=65$ nm). This was achieved without the need for de-embedding. The low $\mathit{NF}_{\text{min}}$ in metal oxide semiconductor field-effect transistors (MOSFETs) with a small number of gate fingers can also reduce DC power consumption. The data was found to be consistent with a simulation of the DC current–voltage ($I$–$V$), $S$-parameter, and $\mathit{NF}_{\text{min}}$ characteristics.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-06-15

著者

• Kao Hsuan-ling

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan, R.O.C.

• Liao Chin-Chang

  Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, R.O.C.

• Kao Hsuan-Ling

  Department of Electronic Engineering, Chang Cung University, Tao-Yuan 333, Taiwan, R.O.C.

関連論文

• Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate
• Direct Measurement of Low Noise 90-nm-Node RF Metal Oxide Semiconductor Field-Effect Transistors Using New Layout
• Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor
• High-Performance Radio Frequency Passive Devices on Plastic Substrates for Radio Frequency Integrated Circuit Application
• Radio Frequency Performance Improvement with Drain Bias and Limiting Factors of 65-nm-Node Radio Frequency Metal–Oxide–Semiconductor Field-Effect Transistors

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