Improved Stress Reliability of Analog TiHfO Metal–Insulator–Metal Capacitors Using High-Work-Function Electrode

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概要

• 論文の詳細を見る

• We have studied the reliability of high-$\kappa$ ($\kappa \sim 49$) TixHf1-xO ($x \sim 0.67$) metal–insulator–metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-11-15

著者

• Mcalister Sean

  Institute For Microstructural Sciences National Research Council Of Canada

• Chin Albert

  Department Of Electronic Engineering National Chiao Tung University

• Chou Chang-pin

  Department Of Mechanical Engineering National Chiao Tung University

• Pan Han-Chang

  Instrument Technology Research Center, National Applied Research Labs, Hsinchu 300, Taiwan, R.O.C.

• Cheng Chun-Hu

  Department of Mechanical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chiang Kuo-Cheng

  Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chou Chang-Pin

  Department of Mechanical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hsiao Chien-Nan

  Instrument Technology Research Center, National Applied Research Labs, Hsinchu 300, Taiwan, R.O.C.

• McAlister Sean

  Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada

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