Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning

スポンサーリンク

概要

• 論文の詳細を見る

• A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 10^{6} cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO<inf>2</inf>, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

• 2013-04-25

著者

• Chin Albert

  Department Of Electronic Engineering National Chiao Tung University

• Cheng Chun-Hu

  Department of Mechanical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Cheng Chun-Hu

  Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan

• Chin Albert

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

関連論文

• Deuterium Effect on Stress-Induced Leakage Current
• Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate
• Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal–Insulator–Metal Capacitors
• Unipolar Ni/GeOx/PbZr.Ti.O/TaN Resistive Switching Memory
• AC Power Loss and Signal Coupling in Very Large Scale Integration Backend Interconnects
• Improved Stress Reliability of Analog TiHfO Metal–Insulator–Metal Capacitors Using High-Work-Function Electrode
• High-Performance Radio Frequency Passive Devices on Plastic Substrates for Radio Frequency Integrated Circuit Application
• Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning

スポンサーリンク