Simulation for the Microcrystalline Silicon Thin Film Transistors by Considering the Change of Acceptor-Like State and Microcrystal Grain Size Effect

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概要

• 論文の詳細を見る

• A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-07-15

著者

• Chen Bor-yir

  Department Of Materials Science And Engineering National Tsing-hua University

• Jenq Fenq-lin

  Department Of Electrical Engineering National Tsing Hua University

• Yeh Fon-shan

  Department Of Electrical Engineering National Tsing Hua University

• Chen Jiann-ruey

  Department Of Materials Science And Engineering National Tsing Hua University

• Yeh Fon-Shan

  Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, Republic of China

• Chen Bor-Yir

  Department of Mechanical Materials Engineering, National Yunlin Polytechnic Institute,

• Chen Jiann-Ruey

  Department of Materials Science and Engineering, National Tsing Hua University,

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