Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• Rapid thermal annealing (RTA) is proved to be more efficient in dissociating hydrogen complexes than using a constant period of voltage stress (CPVS). Without waiting for the bond breaking of complexes by minority carrier injection, RTA favors the critical base–emitter voltage ($V_{\text{BE}}$) responsible for the occurrence of burn-in (BI) from 1.75 to 1.4 V and thus assists CPVS in reducing $V_{\text{BE}}$ by about 25% used in BI suppression. Besides eliminating the BI, the sample first prepared by RTA and followed by CPVS has larger base and collector current densities at $V_{\text{BE}}>1.1$ V and reaches 6 times those at $V_{\text{BE}}>1.3$ V compared with the sample only using by CPVS.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-03-15

著者

• Houng Mau-phon

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Jenq Fenq-lin

  Department Of Electrical Engineering National Tsing Hua University

• Chong Kwok-Keung

  Department of Microelectronic Engineering, National Kaoshiung Marine University, 142 Hai-Chuan Road, Nan-Tzu, Kaohsiung 811, Taiwan

• Houng Mau-Phon

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan

関連論文

• A Novel Microwave Microstrip Surface Acoustic Wave Filter with Gigahertz Band Low-Loss Wide Bandwidth for Broad Spectrum Communication System
• Effects of Annealing on Tantalum Pentoxide Films in N_2 and N_2O Gas Environments : Surfaces, Interfaces, and Films
• Very High Selective Etching of GaAs/Al0.2Ga0.8As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution
• Dual-Mode Ring Bandpass Filter Using Defected Ground Structure with a Wider Stopband(Microwaves, Millimeter-Waves)
• High Spurious Suppression of the Dual-Mode Patch Bandpass Filter Using Defected Ground Structure(Microwaves, Millimeter-Waves)
• Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes
• Light Output Enhancement of AlGaInP Light Emitting Diodes with Nanopores of Anodic Alumina
• High Capacitance Density in a Ta_2O_5 Folded Capacitor Chip
• Simulation for the Microcrystalline Silicon Thin Film Transistors by Considering the Change of Acceptor-Like State and Microcrystal Grain Size Effect
• TiN Enhancement of Output Performance for Light-Emitting Diodes under High Injection Current
• Microstructures and Microwave Dielectric Properties of ($1-x$)MgO$\cdot$$x$BaO$\cdot$TiO2 Ceramics
• Liquid Phase Chemical Enhanced Oxidation on AlGaAs and Its Application
• Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors
• Investigation of Novel Microwave Surface-Acoustic-Wave Filter on Different Piezoelectric Substrates
• Simulation for the Microcrystalline Silicon Thin Film Transistors by Considering the Change of Acceptor-Like State and Microcrystal Grain Size Effect
• Effects of Annealing on Tantalum Pentoxide Films in N2 and N2O Gas Environments

もっと見る 閉じる

スポンサーリンク