TiN Enhancement of Output Performance for Light-Emitting Diodes under High Injection Current
スポンサーリンク
概要
- 論文の詳細を見る
Thin titanium nitride (TiN) films with low sheet resistance and high transparency are deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices are fabricated both with and without TiN spreading layers. At a high injection current, the TiN film spreads the current over a large area of the device and improves the distribution of light emission. Therefore, the current crowding effect is reduced and light-output power is increased. Background theory is discussed and experimental results are presented. It is shown by theory and experiment that the transparent conducting TiN films can be used as inexpensive, easily implemented current-spreading layers for improved global reliability and efficiency of AlGaInP LEDs.
- 2004-02-15
著者
-
Wang Yeong-her
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
-
Houng Mau-phon
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
-
Houng Mau-Phon
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, ROC
-
Liu Chien-Chih
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, ROC
-
Wang Wei-Ting
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, ROC
-
Wang Yeong-Her
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, ROC
関連論文
- Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy
- Direct Growth of High-Quality In_xGa_As Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition
- A Novel Microwave Microstrip Surface Acoustic Wave Filter with Gigahertz Band Low-Loss Wide Bandwidth for Broad Spectrum Communication System
- Effects of Annealing on Tantalum Pentoxide Films in N_2 and N_2O Gas Environments : Surfaces, Interfaces, and Films
- Very High Selective Etching of GaAs/Al0.2Ga0.8As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution
- Dual-Mode Ring Bandpass Filter Using Defected Ground Structure with a Wider Stopband(Microwaves, Millimeter-Waves)
- High Spurious Suppression of the Dual-Mode Patch Bandpass Filter Using Defected Ground Structure(Microwaves, Millimeter-Waves)
- Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes
- Light Output Enhancement of AlGaInP Light Emitting Diodes with Nanopores of Anodic Alumina
- High Capacitance Density in a Ta_2O_5 Folded Capacitor Chip
- TiN Enhancement of Output Performance for Light-Emitting Diodes under High Injection Current
- Microstructures and Microwave Dielectric Properties of ($1-x$)MgO$\cdot$$x$BaO$\cdot$TiO2 Ceramics
- Liquid Phase Chemical Enhanced Oxidation on AlGaAs and Its Application
- Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors
- Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy
- Investigation of Novel Microwave Surface-Acoustic-Wave Filter on Different Piezoelectric Substrates
- Effects of Annealing on Tantalum Pentoxide Films in N2 and N2O Gas Environments