Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes
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概要
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By inductively coupled plasma (ICP) etching, a selective high barrier region (SHBR) was fabricated below the p-pad metal electrode for modifying the injection current distribution on p-type GaN of GaN-based light-emitting diodes (LEDs). Through the analysis of current noise power spectra, the samples with ICP etching treatment have excess nitrogen vacancies at the selectively etched surface of p-type GaN; thus, they have a lower hole concentration than the as-grown sample, resulting in a larger barrier height for carrier transport. With this SHBR, the light-output power for the LED chip measured at 20 mA was significantly increased by 12% as compared with that for the conventional LED chip. The light-output power increase could be attributed to a relative reduction in optical power absorption under the p-pad electrode and a higher density of current effectively injected into the active layer of the LED by the SHBR structure.
- 2010-11-25
著者
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Houng Mau-phon
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Hung Chen-i
Department Of Mechanical Engineering National Cheng-kung University
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Kuo Ting-Wei
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C.
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Lin Shi-Xiong
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C.
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Hung Pin-Kun
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C.
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Chong Kwok-Keung
Department of Microelectronics Engineering, National Kaohsiung Marine University, Kaoshiung 811, Taiwan, R.O.C.
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Chong Kwok-Keung
Department of Microelectronic Engineering, National Kaoshiung Marine University, 142 Hai-Chuan Road, Nan-Tzu, Kaohsiung 811, Taiwan
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Houng Mau-Phon
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C.
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Hung Chen-I
Department of Mechanical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C.
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