Microstructures and Microwave Dielectric Properties of ($1-x$)MgO$\cdot$$x$BaO$\cdot$TiO2 Ceramics
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概要
- 論文の詳細を見る
The microstructures and microwave dielectric properties of ($1-x$)MgO$\cdot$$x$BaO$\cdot$TiO2 ceramics ($x=0.005$, 0.01, 0.03, and 0.05) prepared by a conventional solid-state reaction method and sintered at temperatures from 1280°C to 1400°C were investigated. Some minor phases were observed in ($1-x$)MgO$\cdot$$x$BaO$\cdot$TiO2 under different sintering conditions. The dielectric constant and $Q\times f$ of the specimens increased with an increase in $x$. In the ($1-x$)MgO$\cdot$$x$BaO$\cdot$TiO2 system, the temperature coefficient of resonant frequency could be controlled by varying $x$ and can lead to a zero $\tau_{f}$. For practical applications, 0.97MgO$\cdot$0.03BaO$\cdot$TiO2 ceramics sintered at 1320°C have excellent microwave dielectric properties: $\varepsilon_{\text{r}}=20.6$, $Q\times f=32600$ GHz and $\tau_{f}=+4.47$ ppm/°C.
- 2004-05-15
著者
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Houng Mau-phon
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Hung Chen-i
Department Of Mechanical Engineering National Cheng-kung University
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Weng Ming-hang
National Nano Device Laboratories
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Chen Hsun-Chin
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.
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Houng Mau-Phon
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.
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Hung Chen-I
Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.
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Weng Ming-Hang
National Nano Device Laboratories, Tainan, Taiwan 744, R.O.C.
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