An Efficient Improvement for Barrier Effect of W-filled Contact

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概要

• 論文の詳細を見る

• A post chemical vapor deposition of tungsten (CVD-W) treatment by N2 plasma is proposed to suppress the WAl12 formation during subsequent thermal annealing, which improves the thermal stability of W-filled contact. Selective CVD-W is employed to fill the contact hole. Following W deposition, in situ N2 plasma treatment is performed prior to Al alloy metallization. It is shown that this post CVD-W treatment efficiently suppresses the formation of WAl12, resulting in an improvement of the barrier capability of W-filled contact.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Tsai Ming-hsing

  Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• Yeh Wen-kuan

  Department Of Electrical Engineering National University Of Kaohsiung

• LIN Mou-Shiung

  Taiwan Semiconductor Manufacture Company

• Chang Ting-chang

  Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora

• Chan Kuang-yang

  Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora

• Chen Sheng-hsiung

  Department Of Electrical Engineer Tung Fang Institute Of Technology

• Chan Kuang-Yang

  Department of Electronics Engineering, National Chiao Tung University and National Nano Device Laboratory,

• Yeh Wen-Kuan

  Department of Electronics Engineering, National Chiao Tung University and National Nano Device Laboratory,

• Chang Ting-Chang

  Department of Electronics Engineering, National Chiao Tung University and National Nano Device Laboratory,

• Chen Mao-Chieh

  Department of Electronics Engineering, National Chiao Tung University and National Nano Device Laboratory,

• Tsai Ming-Hsing

  Department of Electronics Engineering, National Chiao Tung University and National Nano Device Laboratory,

• Tsai Ming-Hsing

  Department of Electronic Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Road, NanTzu District, Kaohsiung, Taiwan 811, R.O.C.

• Lin Mou-Shiung

  Taiwan Semiconductor Manufacture Company, Hsinchu, Taiwan, R.O.C.

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