Low-Temperature-Processed Polycrystalline silicon thin-film transistors Using a New Two-Step Crystallization Technique
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概要
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Low-temperature-processed (LTP) Polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated with a poly-Si film crystallized by a new two-step crystallization (NTSC) technique were investigated. The NTSC is characterized by the combination of excimer-laser-induced formation of nucleation centers and short-time low- temperature furnace annealing to create clear crystalline grains with very few in-grain defects. The LTP poly-Si TFTs fabricated with a NTSC poly-Si film not only exhibit better performance but also significantly shorten the crystallization time (about 6 h at 600°C) as compared to those fabricated using conventional solid phase crystallization (about 20 h or longer at 600°C).
- 2003-10-15
著者
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CHEN Mao-Chieh
Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University
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Fan Ching-lin
Institute Of Electro-optical And Material Science National Huwei Institute Of Technology
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Chang Yih
Ritdisplay Corporation
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Fan Ching-Lin
Institute of Electro-Optical and Material Science, National Huwei Institute of Technology, Yunlin, Taiwan, R.O.C.
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Chen Mao-Chieh
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C.
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