Formation of Bilayer Shallow MoSi_2/CoSi_2 Salicide Contact Using W/Co-Mo Alloy Metallization

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-04-15

著者

• Yang Fann-mei

  Department Of Electronics Engineering & The Institute Of Electronics National Chiao Tung Univers

• Chen M‐c

  National Chiao‐tung Univ. Hsinchu Twn

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• Chen M‐c

  Department Of Electronics Engineering National Chiao Tung University

関連論文

• Formation of Bilayer Shallow MoSi_2/CoSi_2 Salicide Contact Using W/Co-Mo Alloy Metallization
• Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
• Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
• Effects of O_2- and N_2-Plasma Treatments on Copper Surface
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
• Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
• Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
• An Efficient Improvement for Barrier Effect of W-filled Contact
• An Efficient Improvement for Barrier Effect of W-Filled Contact
• Reactively Sputtered Amorphous TaSi_xN_y Films Serving as Barrier Layer Against Copper Diffusion
• Chemically Vapor Deposited Cu Films on Ar-Plasma-Treated TiN Substrate(Surfaces, Interfaces, and Films)
• Effects of N_2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors
• Copper Chemical Vapor Deposition Films Deposited from Cu(1, 1, 1, 5, 5, 5-hexafluoroacetylacetonate) vinyltrimethylsilane
• Low-Temperature-Processed Polycrystalline silicon thin-film transistors Using a New Two-Step Crystallization Technique
• Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
• Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiC:H Films from Trimethylsilane and Tetramethylsilane
• Effect of TiN Substrate Plasma Treatment on Copper Chemical Vapor Deposition
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents
• Thermal Stability of Cu/NiSi-Contacted p+n Shallow Junction
• An Efficient Improvement for Barrier Effect of W-filled Contact
• Effects of O2- and N2-Plasma Treatments on Copper Surface
• Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films
• Formation of NiSi-Silicided p+n Shallow Junctions by BF2+ Implantation into/through Silicide and Rapid Thermal Annealing
• Formation and Characterization of NiSi-Silicided n+p Shallow Junctions

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