Copper Chemical Vapor Deposition Films Deposited from Cu(1, 1, 1, 5, 5, 5-hexafluoroacetylacetonate) vinyltrimethylsilane
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概要
- 論文の詳細を見る
Copper chemical vapor deposition (Cu CVD) from Cu (hfac) vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films was dependent on the film's micro structure and impurity content, which in turn were dependent on the deposition conditions. Using H_2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Å/min. The lowest resistivity Cu films can be deposited at a temperature of 180℃ and a pressure of 300 mTorr.
- 社団法人応用物理学会の論文
- 1999-08-15
著者
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CHEN Mao-Chieh
Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University
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Chen Mao-chieh
Department Of Electronics Engineering National Chiao Tung University
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Lin Pi-jiun
Department Of Electronics Engineering National Chiao Tung University
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