Effect of TiN Substrate Plasma Treatment on Copper Chemical Vapor Deposition
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概要
- 論文の詳細を見る
In this study, we investigated copper chemical vapor deposition (Cu CVD) on TiN substrates with respect to the effects of various plasma treatments. The Cu films deposited on the Ar-, H2-, and Ar+H2-plasma-treated TiN substrates all exhibit favorable properties over films deposited on the as-deposited TiN substrate. These include a smaller wetting angle of Cu nucleation and thus a smoother film surface, and an increased (111)-preferred orientation. However, the Cu films deposited on the plasma-treated substrates all exhibit a slightly higher resistivity, presumably due to a small grain size. With postdeposition thermal annealing at 400°C, the surface roughness of the Cu films and the Cu(111)/Cu(200) reflection ratio were both improved. We consider that a combined process including an Ar+H2 plasma substrate treatment prior to Cu film deposition and a postdeposition thermal annealing is favorable for achieving a low surface roughness and high (111)-oriented Cu film deposition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-05-15
著者
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CHEN Mao-Chieh
Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University
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Lin Cheng-li
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
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Chen Mao-Chieh
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
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Chang Chun-Li
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
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Lin Cheng-li
Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan 407, Republic of China
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