Effects of N_2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors

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概要

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• The effects of N_2O plasma treatment on the performance of excimer-laser-annealed (ELA) polycrystalline silicon thin film transistors (poly-Si TFTs) were investigated. The N_2O plasma treatment was conducted following the deposition of the low-temperature gate oxide, resulting in an obvious improvement in the performance of the ELA poly-Si TFTs. This improvement is presumably due to the smoothed oxide/poly-Si interface, the improved gate-oxide quality, and the reduced trap states at the interface and in the poly-Si channel, resulting from the incorporation and passivation reaction of the N_2O -plasma-generated nitrogen and oxygen radicals. Moreover, the N_2O plasma treatment also improved the stability of the ELA poly-Si TFTs under de voltage stress.

• 社団法人応用物理学会の論文
• 2002-09-15

著者

• Fan C‐l

  National Huwei Inst. Of Technol. Yunlin Twn

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• Fan Ching-lin

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University

• Fan Ching-Lin

  Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.

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