Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays
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概要
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In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (${<}1$%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.
- 2010-05-25
著者
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Fan Ching-lin
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University
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Ching-Lin Fan
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.
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Chang Jyu-Yu
Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan
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Jyu-Yu Chang
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.
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Lai Hui-Lung
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.
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Fan Ching-Lin
Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.
関連論文
- Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
- Effects of N_2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors
- Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays
- A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode
- Excellent Quality of SiO_2 Dielectric Film Prepared by Room-Temperature Ion Plating and Its Application to Thin-Film Transistors
- Effect of Inserting Teflon as a Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors
- Improvement in Characteristics of Low-Temperature Polycrystalline Silicon Thin Film Transistors with High-Efficiency and Low-Damage N2 Plasma Pretreatment
- Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization