Improvement in Characteristics of Low-Temperature Polycrystalline Silicon Thin Film Transistors with High-Efficiency and Low-Damage N2 Plasma Pretreatment
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概要
- 論文の詳細を見る
In this study, the pretreatment on the surface of a polycrystalline silicon (poly-Si) channel layer using the N2 plasma generated by a hollow cathode (HC) generation system was proposed. It was found that the pretreatment can not only passivate the defect states but also present a smooth oxide/poly-Si interface, which can significantly improve the device performance. Therefore, the scheme used can offer a high-efficiency passivation with low plasma damage. In addition, the reliability of the device was greatly enhanced after the N2 plasma pretreatment as a result of the formation of strong Si--N bonds and a smooth oxide/poly-Si interface. We believe that the N2 plasma pretreatment using the HC system is suitable for the mass-production of high-resolution displays.
- 2011-10-25
著者
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Lin Yi-yan
Department Of Electronic Engineering National Taiwan University Of Science And Technology
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Fan Ching-lin
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University
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Lin Yi-Yan
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.
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Wang Shou-Kuan
Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.
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Wang Shou-Kuan
Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
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Fan Ching-Lin
Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.
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