Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization
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概要
- 論文の詳細を見る
We demonstrate the feasibility of continuous-wave laser crystallization (CLC) applied to product manufacturing with optimum laser parameters, paying particular attention to scan speed stability. With the optimized laser parameters, microscopic cracks at the interface between the buffer insulator and the crystallized polycrystalline silicon (poly-Si) film are significantly reduced. The optimization of laser parameters consists of increasing laser scan speed, decreasing scan speed deviation rate, and optimizing laser energy. We believe that CLC using the optimized laser parameters with a stable scan speed will provide a feasible and simple method for fabricating high-performance poly-Si thin-film transistors (TFTs).
- Japan Society of Applied Physicsの論文
- 2006-09-25
著者
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Yang Tsung-hsien
Department Of Pharmaceutical Technology Mithra Bioindustry Co. Ltd.
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Fan Ching-lin
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University
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Lin Cheng-I
Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.
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Yang Tsung-Hsien
Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.
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Fan Ching-Lin
Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.
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