Effect of Inserting Teflon as a Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Yang Tsung-Hsien
Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.
-
Fan Ching-Lin
Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.
-
Chiu Ping-Cheng
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan
関連論文
- Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
- High-performance liquid chromatographic determination of clindamycin in human plasma or serum : application to the bioequivalency study of clindamycin phosphate injections
- Determination of clindamycin in human plasma by liquid chromatography-electrospray tandem mass spectrometry : application to the bioequivalence study of clindamycin
- Effects of N_2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors
- Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays
- A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode
- Excellent Quality of SiO_2 Dielectric Film Prepared by Room-Temperature Ion Plating and Its Application to Thin-Film Transistors
- Effect of Inserting Teflon as a Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors
- Improvement in Characteristics of Low-Temperature Polycrystalline Silicon Thin Film Transistors with High-Efficiency and Low-Damage N2 Plasma Pretreatment
- Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization