Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness

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概要

• 論文の詳細を見る

• The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.

• （社）電子情報通信学会の論文
• 2010-01-01

著者

• Lin Yi-yan

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Fan Ching‐lin

  Department Of Electronic Engineering And Graduate Institute Of Electro-optical Engineering National

• Fan Ching-lin

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University

• YANG Yan-Hang

  Department of Electronic Engineering, National Taiwan University of Science and Technology

• CHEN Hung-Che

  Department of Electronic Engineering, National Taiwan University of Science and Technology

• Yang Yan-hang

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Chen Hung-che

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Fan Ching-Lin

  Department of Electronic Engineering and Institute of Electronics, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan, R.O.C.

関連論文

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