Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

スポンサーリンク

概要

• 論文の詳細を見る

• This study investigated a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) with a fluorinated silicate glass (FSG) drive-in masking layer on the channel layer to improve the device's performance. The FSG layer can also be patterned as a masking layer to define the source and drain (S/D) regions, and the activation of S/D regions and fluorine passivation treatment can be accomplished simultaneously. Fluorine atoms can diffuse from the FSG drive-in masking layer into the bulk channel to passivate the trap states, resulting in a considerable improvement of the electrical characteristics of the device. This demonstrated that the field-effect mobility increased from 10.9 to 30.4 cm2 V-1 s-1, and the on/off current ratio increased from 8.9 \times 10^{4} to 10.4 \times 10^{5}. The proposed scheme is simple, economical, and suitable for mass production of large-sized displays.

• 2012-10-25

著者

• Lin Yi-yan

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Fan Ching-lin

  Graduate Institute Of Electro-optical Engineering National University Of Science And Technology

• Lin Wei-Chun

  Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

• Wang Shou-Kuan

  Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

• Shang Min-Chi

  Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

• Fan Ching-Lin

  Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

• Lin Yi-Yan

  Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

関連論文

• Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes
• Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
• A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode
• Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer
• Improvement in Characteristics of Low-Temperature Polycrystalline Silicon Thin Film Transistors with High-Efficiency and Low-Damage N2 Plasma Pretreatment

スポンサーリンク