Effects of O2- and N2-Plasma Treatments on Copper Surface

スポンサーリンク

概要

• 論文の詳細を見る

• In this work, we investigate the effects of oxygen (O2) and nitrogen (N2) plasma treatments on the copper surface of aluminum/amorphous silicon-nitricarbide/copper (Al/$\alpha$-SiCN/Cu) metal–insulator–metal (MIM) capacitors with respect to their leakage current and breakdown field. It is found that both the O2- and N2-plasma treatments have an adverse effect on the leakage current and breakdown field of MIM capacitors. The MIM capacitors with their Cu surfaces subjected to O2- or N2-plasma treatment exhibit a room-temperature leakage current density several orders of magnitude larger than that of the sample without plasma treatment at the same applied electric field. The room-temperature breakdown fields of the MIM capacitors with O2- and N2-plasma-treated Cu surfaces are 3.8 and 3.2 MV/cm, respectively, while that of the control sample without plasma treatment is 7.8 MV/cm. The increased leakage currents and degraded breakdown fields of the O2- and N2-plasma-treated samples are attributed, respectively, to the presence of metastable Cu–O oxide and Cu–N azide at the Cu surfaces.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-15

著者

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• JANG Syun-Ming

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufact

• LIANG Mong-Song

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufact

• Chiang Chiu-chih

  Department Of Electronics Engineering National Chiao-tung University

• Li Lain-jong

  Department Of Chemistry National Taiwan University

• Chiang Chiu-Chih

  Department of Electronics Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

• Wu Zhen-Cheng

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park, Hsinchu 300, Taiwan

• Li Lain-Jong

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park, Hsinchu 300, Taiwan

• Liang Mong-Song

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park, Hsinchu 300, Taiwan

• Jang Syun-Ming

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park, Hsinchu 300, Taiwan

関連論文

• Formation of Bilayer Shallow MoSi_2/CoSi_2 Salicide Contact Using W/Co-Mo Alloy Metallization
• Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
• Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
• Effects of O_2- and N_2-Plasma Treatments on Copper Surface
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
• Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
• Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
• An Efficient Improvement for Barrier Effect of W-filled Contact
• An Efficient Improvement for Barrier Effect of W-Filled Contact
• Reactively Sputtered Amorphous TaSi_xN_y Films Serving as Barrier Layer Against Copper Diffusion
• Chemically Vapor Deposited Cu Films on Ar-Plasma-Treated TiN Substrate(Surfaces, Interfaces, and Films)
• Bulk Crystallization Behavior of Poly(ε-caprolactone) with a Wide Range of Molecular Weight
• Effects of N_2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors
• Copper Chemical Vapor Deposition Films Deposited from Cu(1, 1, 1, 5, 5, 5-hexafluoroacetylacetonate) vinyltrimethylsilane
• Low-Temperature-Processed Polycrystalline silicon thin-film transistors Using a New Two-Step Crystallization Technique
• Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
• Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiC:H Films from Trimethylsilane and Tetramethylsilane
• Effect of TiN Substrate Plasma Treatment on Copper Chemical Vapor Deposition
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents
• Thermal Stability of Cu/NiSi-Contacted p+n Shallow Junction
• An Efficient Improvement for Barrier Effect of W-filled Contact
• Effects of O2- and N2-Plasma Treatments on Copper Surface
• Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films
• Formation of NiSi-Silicided p+n Shallow Junctions by BF2+ Implantation into/through Silicide and Rapid Thermal Annealing
• Formation and Characterization of NiSi-Silicided n+p Shallow Junctions

もっと見る 閉じる

スポンサーリンク