New Observations on Hot-Carrier Degradation in 0.1 μm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-05-01

著者

• FANG Yean-Kuen

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat

• Fang Yean-kuen

  Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.

• YEH Wen-Kuan

  Department of Electrical Engineering, National University of Kaohsiung

• Yeh Wen-kuan

  Department Of Electrical Engineering National University Of Kaohsiung

• Yeh W‐k

  National Univ. Of Kaohsiung Kaohsiung Twn

• Yang Fu-liang

  Taiwan Semiconductor Manufacturing Company Exploratory Device Dept. Device Engineering Division Scie

• Yang Fu-liang

  Taiwan Semiconductor Manufacturing Company

• Wang Wen-han

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Fang Yean-kuen

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Fang Yean-kuan

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Yen Wen-Kua

  Department of Electrical Engineering, National University of Kaohsiung

関連論文

• Mechanism of Chemical Mechanical Planarization Induced Edge Corrosion of Copper Line for Cu/Low-k SiOC Interconnects
• Efficient Improvement on Device Performance for sub-90nm CMOSFETs
• An Efficient Mobility Enhancement Engineering on 65nm FUSI CMOSFETs using a Second CESL Process
• Systematic Analysis and Modeling of On-Chip Spiral Inductors for CMOS RFIC Application
• Mobility Modulation Technology Impact on Device Performance and Reliability for sub-90nm SOI CMOSFETs
• The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs
• Width Effect on Hot-Carrier-Induced Degradation for 90nm Partially Depleted SOI CMOSFETs
• Width Effect on Hot-Carrier-induced Degradation for 90nm Partially Depleted SOI CMOSFET
• The Impact of Pad Test-Fixture for De-embedding on Radio-Frequency MOSFETs
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Effects of hot carriers on DC and RF performances of deep submicron PMOSFET for low-power and high frequency applications
• The Growth and Characterization of Silicon/Silicon Carbide Heteroepitaxial Films on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition
• A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress
• Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
• An Efficient Improvement for Barrier Effect of W-filled Contact
• An Efficient Improvement for Barrier Effect of W-Filled Contact
• Epitaxial Growth and Electrical Characteristics of β-SiC on Si by Low-Pressure Rapid Thermal Chemical Vapor Deposition
• Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor
• Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
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• New Observations on Hot-Carrier Degradation in 0.1 μm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors : Semiconductors
• Efficient Suppression of Substrate Noise Coupling in Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
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• Width Effect on Hot-Carrier-Induced Degradation for 90 nm Partially Depleted SOI CMOSFETs
• Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Investigation of the Relationship between Whole-Wafer Strength and Control of Its Edge Engineering
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• An Efficient Improvement for Barrier Effect of W-filled Contact
• Systematic Analysis and Modeling of On-Chip Spiral Inductors for Complementary Metal Oxide Semiconductor Radio Frequency Integrated Circuits Applications
• Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric

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