High Current Density in Amorphous Silicon/Siliconcarbide Double-Barrier Resonant Tunneling Device on Aluminum/Silicon Substrate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-06-01
著者
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FANG Yean-Kuen
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat
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Chen K‐h
Inst. Atomic And Molecular Sci. Acad. Sinica Taipei Twn
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Fang Y‐k
National Cheng Kung Univ. Taina Twn
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Fang Yean-kuen
Vlsi Technology Laboratory Electrical Engineering National Cheng Kung University
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Fang Yean-kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Fang Yean-kuen
Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.
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HWANG Jun-Dar
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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Hwang J‐d
National Cheng Kung Univ. Tainan Twn
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Hwang Jun-dar
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
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Liu Ching-ru
Vlsi Technology Laboratory Electrical Engineering National Cheng Kung University
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CHEN Kuin-Hui
VLSI Technology Laboratory, Electrical Engineering, National Cheng Kung University
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WU Kun-Shiu
VLSI Technology Laboratory, Electrical Engineering Department, National Cheng Kung University
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Wu Kun-shiu
Vlsi Technology Laboratory Electrical Engineering Department National Cheng Kung University
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Chen Kuin-hui
Vlsi Technology Laboratory Electrical Engineering National Cheng Kung University
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