Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-05-15

著者

• FANG Yean-Kuen

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat

• LEE Kuei-Yi

  Department of Electronic Engineering, Graduate School of Engineering, Osaka University

• Chen C‐w

  Industrial Technol. Res. Inst. Hsinchu Twn

• Fang Y‐k

  National Cheng Kung Univ. Taina Twn

• Fang Yean-kuen

  Vlsi Technology Laboratory Electrical Engineering National Cheng Kung University

• Fang Yean-kuen

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University

• Fang Yean-kuen

  Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.

• LIANG Mong-Song

  Taiwan Semiconductor Manufacturing Co., Ltd.

• Liang Mong-song

  R&d Department Taiwan Semiconductor Manufacturing Company

• Liang Mong-song

  Taiwan Semiconductor Manufacturing Co. Ltd.

• Lee K‐y

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University

• Lee Ki-young

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University

• LEE Kan-Yuan

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University

• CHEN Chii-Wen

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University

• HSIEH Jang-Cheng

  Taiwan Memory Technology Inc.

• Lin M‐s

  Taiwan Semiconductor Manufacturing Company

• Hsieh Jang-cheng

  Taiwan Semiconductor Manufacturing Company Ltd. Science-based Industrial Park

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