Epitaxial Growth and Electrical Characteristics of β-SiC on Si by Low-Pressure Rapid Thermal Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-03-15
著者
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FANG Yean-Kuen
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat
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Fang Yean-kuen
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
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Fang Yean-kuen
Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.
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HWANG Jun-Dar
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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YAUNG Dun-Nian
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University
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Hwang Jun-dar
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kung University
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Yaung Dun-nian
Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University
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Song You-joung
Advanced Display And Mems Research Center Daewoo Electronics
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Song You-Joung
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University
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